MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.4A; Current Temperature:25°C; External Depth:5.26mm; External Length / Height:1.2mm; External Width:6.2mm; Full Power Rating Temperature:25K; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; N-channel Gate Charge:50nC; On State Resistance Max:6.5mohm; Package / Case:PowerPAK SO; Power Dissipation Pd:1.9W; Power Dissipation Pd:1.9W; Power Dissipation Ptot Max:1.9W; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:0.6V