サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-07-30
LTD Date2006-10-30
説明
Vishay SI4410DY-REVAの詳細は販売業者から提供されます。
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel 30-V (D-S) MOSFET
MOSFETs 30V 10A 2.5W
OBSOLETE - USE SI4410BDY-T1-E3
メーカーの別名
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- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
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- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
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- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
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- Vishay Semiconductor Diodes Division
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技術仕様
Physical
Case/PackageSO
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Forward Voltage700 mV
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rise Time9 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time19 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm