価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI3477DV-T1-GE3 | 2,384 | 1 | Cut Tape | ||||||||
| Future Electronics | SI3477DV-T1-GE3 | 6,000 | 3K | Tape & Reel | ||||||||
| DigiKey | SI3477DV-T1-GE3CT-ND | 10,276 | 1 | Cut Tape | ||||||||
| TTI | SI3477DV-T1-GE3 | 3,000 | 3K | Tape & Reel | 7h | |||||||
| TME | SI3477DV-T1-GE3 | 0 | 3K | 19h |
関連部品
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30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
説明
Vishay SI3477DV-T1-GE3の詳細は販売業者から提供されます。
SI3477DV-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 8 A, 12 V, 6-PIN TSOP
Single P-Channel 12 V 0.0175 O Surface Mount Power Mosfet - TSOP-6
Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R
Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv Rohs Compliant: No |Vishay SI3477DV-T1-GE3.
メーカーの別名
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- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
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- Vishay Semiconductors
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
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- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight19.986414 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)12 V
Fall Time30 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance2.6 nF
Max Operating Temperature150 °C
Max Power Dissipation4.2 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-400 mV
Number of Channels1
Number of Elements1
Power Dissipation2 W
Rds On Max17.5 mΩ
Resistance17.5 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time65 ns
Turn-On Delay Time10 ns
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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