MOSFET, N, LOGIC, HEXDIP; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:1A; Package / Case:HEXDIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V