サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-07-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
説明
Vishay IRFU420の詳細は販売業者から提供されます。
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs | MOSFET N-CH 500V 2.4A I-PAK
Trans MOSFET N-CH 500V 2.4A 3-Pin (3+Tab) IPAK
Compliant Through Hole 2.39 mm 6.22 mm 6.73 mm 329.988449 mg 16 ns Contains Lead
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:TO-251 (I-Pak); Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:7.7A; Turn Off Time:16ns; Turn On Time:8.6ns
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
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技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)2.4 A
Current Rating2.4 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance360 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation42 W
Rds On Max3 Ω
Rise Time8.6 ns
Turn-Off Delay Time33 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)500 V
Dimensions
Height6.22 mm
Length6.73 mm
Width2.39 mm