MOSFET, N, 200V, 4.8A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:4.8A; Current Temperature:25°C; Fall Time tf:13ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; Rise Time:22ns; Termination Type:Through Hole; Turn Off Time:19ns; Turn On Time:7.2ns; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V