サプライチェーン
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-09-09
Lifecycle StatusProduction (Last Updated: 6 months ago)
関連部品
STMicroelectronicsSTFI13NK60Z
N-channel 600 V, 0.48 Ohm, 13 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PAKFP package
説明
Vishay IRFSL11N50APBFの詳細は販売業者から提供されます。
Single N-Channel 500 V 0.55 Ohms Through Hole Power Mosfet - TO-262
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-262
Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
NCHAN, SMD-220, 500V IRFSL11N50APBF
190W(Tc) 30V 4V@ 250¦ÌA 51nC@ 10V 1individualNChannel 500V 550m¦¸@ 6.6A,10V 11A 1.426nF@25V TO-262-3 Through hole mounting 10.67mm*4.83mm*9.65mm
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageTO-262-3
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Weight2.387001 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.426 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max550 mΩ
Resistance550 mΩ
Rise Time34 ns
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm