サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
関連部品
onsemiFQPF2N80YDTU
Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
説明
Vishay IRFIBF20GPBFの詳細は販売業者から提供されます。
Single N-Channel 900 V 8 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 900V 1.2A 3-Pin(3+Tab) TO-220FP
POWER MOSFET Power Field-Effect Transistor, 1.2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220FP 900V 1.2A; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissi
メーカーの別名
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技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)1.2 A
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance490 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation30 W
Rds On Max8 Ω
Resistance8 Ω
Rise Time21 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time56 ns
Turn-On Delay Time8 ns
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm