サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
説明
Vishay IRFI634GPBFの詳細は販売業者から提供されます。
N-Channel 250 V 5.6 A (Tc) 35W (Tc) Through Hole Power MOSFET - TO-220-3
Trans MOSFET N-CH 250V 5.6A 3-Pin(3+Tab) TO-220FP
POWER MOSFET Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CHANNEL MOSFET, 250V, 5.6A, TO-220FP;; N CHANNEL MOSFET, 250V, 5.6A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 450mohm; Rds(on) Test
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
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- VISAHY
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- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
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- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
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- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
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- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance770 pF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation35 W
Rds On Max450 mΩ
Rise Time21 ns
Threshold Voltage2 V
Turn-Off Delay Time42 ns
Turn-On Delay Time9.6 ns
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm