価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRFBF30STRLPBFCT-ND | 1,345 | 1 | Cut Tape | ||||||||
| TME | IRFBF30STRLPBF | 0 | 800 | 20h | ||||||||
| TTI | IRFBF30STRLPBF | 0 | 800 | Tape & Reel | 26m | |||||||
| Avnet | IRFBF30STRLPBF | 0 | 800 | 5d | ||||||||
| TTI Asia | IRFBF30STRLPBF | 連絡先 | 1h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-09-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
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MOSFET N-CH 900V 15A TO-263 / Trans MOSFET N-CH 900V 15A 3-Pin(2+Tab) D2PAK T/R
説明
Vishay IRFBF30STRLPBFの詳細は販売業者から提供されます。
125W(Tc) 20V 4V@ 250¦ÌA 78nC@ 10 V 1N 900V 3.7¦¸@ 2.2A,10V 3.6A 1.2nF@25V D2PAK,TO-263
Trans MOSFET N-CH 900V 3.6A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):3.7ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Resistance3.7 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max3.7 Ω
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time90 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.41 mm
Width9.65 mm