関連部品
InfineonSPI08N50C3XKSA1
MOSFET N-CH 560V 7.6A TO262-3 N-Channel 560 V 7.6A (Tc) 83W (Tc) Through Hole PG-TO262-3-1
説明
Vishay IRF720LPBFの詳細は販売業者から提供されます。
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CHANNEL 400V
MOSFET N-CH 400V 3.3A TO262-3
MOSFET N-CH 400V 3.3A TO-262
NCHAN, SMD-220, 400V, 3A IRF720LPBF
N-CH SINGLE 400V TO263
メーカーの別名
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- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
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- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
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- Vishay General Semiconductor - Diodes Division
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- VSHAY
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- VISHAY INTERTECHNOLOGY ASIA PT
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- Vishay Draloric
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)3.3 A
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vds)400 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance410 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max1.8 Ω
Rise Time14 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time10 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm