価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IRF710STRLPBF | 626 | 65 | |||||||||
| TME | IRF710STRLPBF | 626 | 1 | 17h | ||||||||
| Avnet | IRF710STRLPBF | 0 | 800 | 1d | ||||||||
| TTI Europe | IRF710STRLPBF | 0 | 800 | Tape & Reel | 8h | |||||||
| Win Source | WS-IRF710STRLPBF | 10,100 | 65 | 6h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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N-Channel 400V - 0.49 Ohm - 9A - D2PAK Zener-Protected SuperMESH(TM) POWER MOSFET
説明
Vishay IRF710STRLPBFの詳細は販売業者から提供されます。
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) D2PAK T/R
POWER MOSFET Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):3.6ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SMD-220 ;RoHS Compliant: Yes
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance170 pF
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max3.6 Ω
Rise Time9.9 ns
Turn-Off Delay Time21 ns
Turn-On Delay Time8 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm