Photo Transistor; Dark Current:30nA; Leaded Process Compatible:Yes; Breakdown Voltage Min:60V; Capacitance:40pF; Power Dissipation, Pd:0.215W ;RoHS Compliant: Yes
PHOTODIODE, PIN; Wavelength Typ:950nm; Half Angle:65°; Dark Current:2nA; Diode Case Style:Side Looking; No. of Pins:2; Operating Temperature Min:-40°C; Operating Temperature Max:100°C; Operating Temperature Range:-40°C to +100°C; Package / Case:Radial; Peak Spectral Response Wavelength:950nm; Rise Time:100ns