価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 365-1763-ND | 187 | 1 | Bulk | ||||||||
| TTI | OPB892T55Z | 1,950 | 50 | Bulk | 2d | |||||||
| Sager Electronics | OPB892T55Z | 0 | 300 | Bulk | ||||||||
| Newark | OPB892T55Z | 0 | 300 | |||||||||
| Onlinecomponents.com | OPB892T55Z | 0 | 300 | Bulk |
サプライチェーン
Country of OriginMexico
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
説明
TT Electronics OPB892T55Zの詳細は販売業者から提供されます。
Gap/Reflective Sensor Rohs Compliant: Yes |Tt Electronics/optek Technology OPB892T55Z
3.11 mm SLOT WIDTH 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
890nm Through-Beam 3.18mm Phototransistor PCB, 24.63mm*6.35mm*10.92mm
Sens Opto Slot 3.18mm Trans Thru | Optek (TT Electronics) OPB892T55Z
Photointerrupter Transmissive 3.18mm Phototransistor 4-Pin
SENSOR OPT SLOT PHOTOTRAN PCB MT
メーカーの別名
TT Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 TT Electronics は以下の名前でも知られているかもしれません：
- TT Electronics/BI
- TT Electronics/Optek Technology
- TT Electronics/IRC
- TT ELECTRONICS PLC
- TT Electronics/BI Magnetics
- TT Electronics/Welwyn
- IRC/TT Electronics
- TT Electronics / BI Technologies
- TT Electronics Resistors
- TT Electronics - IoT Solutions
- TT Electronics Welwyn Components
- TT Electronics/Power Partners Inc
- TT ELECTRONICS/IRC [MIL]
- TTELEC
- Optek Technology/TT Electronics
- TT ELECT
- TT ELECTRONICS/IRC (VA)
- BI Technologies / TT Electronics
- TT ELECTRONICS/ROXSPUR MEASUREMENT & CONTROL LTD
- TT ELECTRONICS - POWER PARTNERS
- TT ELECTRONICS GMBH
- TT/IRC
- AB CONNECTORS
- TT ELECTRONICS / AB CONNECTORS
- TT ELECTRONI
技術仕様
Physical
MountChassis Mount, Screw, Through Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Forward Current50 mA
Max Breakdown Voltage30 V
Max Collector Current30 mA
Max Operating Temperature85 °C
Min Operating Temperature-40 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
PackagingBulk
PolarityNPN
Power Dissipation100 mW
Reverse Breakdown Voltage2 V
Sensing Distance3.175 mm
Wavelength890 nm