関連部品
RenesasR1LV0108ESN-7SI#B0
Obsolete Volatile ROHS3Compliant Parallel SRAM Memory -40C~85C TA 2.7V~3.6V 1Mb 128K x 8 70ns
RenesasR1LV0108ESP-7SI#B0
(128K WORD X 8BIT) 1MBIT ADVANCED LPSRAM Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
128K X 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM Standard SRAM, 128KX8, 55ns, CMOS, PDSO32
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM | IC SRAM 1M PARALLEL 32SOP
説明
Texas Instruments BQ4013LYMA-70Nの詳細は販売業者から提供されます。
128k x 8 NONVOLATILE SRAM, 3.3V Input Voltage 32-DIP MODULE -40 to 85
128KX8 NON-VOLATILE SRAM MODULE, 70ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32
NVRAM NVSRAM Parallel 1M-Bit 3.3V 32-Pin DIP Module
128K X 8 NON-VOLATILE SRAM MODULE 70 ns PDMA32
IC NVSRAM 1MBIT PAR 32DIP MODULE
メーカーの別名
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- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TEXAS INSTRUM
- TI Texas Instruments
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技術仕様
Physical
MountThrough Hole
Number of Pins32
Technical
Access Time70 ns
Data Bus Width8 b
Density1 Mb
InterfaceParallel
Max Operating Temperature85 °C
Max Supply Voltage3.6 V
Memory Size128 kB
Memory TypeNon-Volatile, RAM, SRAM
Min Operating Temperature-40 °C
Min Supply Voltage3 V
Nominal Supply Current50 mA
Operating Supply Current50 mA
Operating Supply Voltage3.3 V
Schedule B8542320040
Word Size8 b