サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2014-01-23
説明
STMicroelectronics STSA1805の詳細は販売業者から提供されます。
Transistor GP BJT NPN 60V 5A 3-Pin TO-92 Bag
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1.1W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Sty
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Current Ic Continuous a Max:5A; Voltage, Vce Sat Max:50mV; Power Dissipation:1.1W; Min Hfe:20; ft, Typ:150MHz; Case;RoHS Compliant: Yes
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- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)150 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min20
Max Collector Current5 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1.1 W
Transition Frequency150 MHz
Voltage Rating (DC)60 V
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant