サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29
説明
STMicroelectronics STP3N62K3の詳細は販売業者から提供されます。
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in TO-220 package
STP3N62K3 N-channel MOSFET Transistor, 2.7 A, 620 V, 3-Pin TO-220
Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 2.7A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; P
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time15.6 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance385 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
Power Dissipation45 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time6.8 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time9 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm