サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
関連部品
STMicroelectronicsSTP20NK50Z
N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected in TO-220 package
STMicroelectronicsSTP15N80K5
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220 package
説明
STMicroelectronics STP17N62K3の詳細は販売業者から提供されます。
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-220 SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 620V 15.5A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 15A I(D), 620V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 620V 15.5A TO220AB
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.5 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max380 mΩ
Resistance280 mΩ
Rise Time26 ns
Schedule B8541290080
Turn-Off Delay Time91 ns
Turn-On Delay Time22 ns