サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-26
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2016-02-04
LTD Date2016-08-04
関連部品
STMicroelectronicsSTP18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
STMicroelectronicsSTP13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
STMicroelectronicsSTP14NM50N
N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220 package
説明
STMicroelectronics STP15NM65Nの詳細は販売業者から提供されます。
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220 package
STP15NM65N N-CHANNEL MOSFET TRANSISTOR, 12 A, 650 V, 3-PIN TO-220
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Tube
12 A 650 V 0.38 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 710V, 12A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance983 pF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max380 mΩ
Resistance350 mΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time55.5 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant