サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-11-16
LTD Date2019-05-16
関連部品
STMicroelectronicsSTP120N4F6
N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
説明
STMicroelectronics STP110N55F6の詳細は販売業者から提供されます。
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
Single N-Channel 55 V 150 W 126 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube
150W(Tc) 20V 4V@ 250¦ÌA 120nC@ 10 V 1N 55V 5.2m¦¸@ 60A,10V 110A 8.35nF@25V TO-220
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.2 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.35 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max5.2 mΩ