STMicroelectronics STN83003の詳細は販売業者から提供されます。
Bipolar Transistors (BJT); STN83003; STMICROELECTRONICS; NPN; 3; 400 V; 1.5 A
STN83003 NPN HIGH VOLTAGE BIPOLAR TRANSISTOR, 1.5 A, 400 V SOT-223
400V 1.6W 1.5A 25@350mA5V 1V@350mA50mA NPN +150¡Í@(Tj) SOT-223-4 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 400V 1.5A 1600mW 4-Pin(3+Tab) SOT-223 T/R
STN83003: Series 400 V 1.5 A 1.6 W Surface Mount NPN Power Transistor - SOT-223
Power Bipolar, NPN, null, -mA, SOT-223, Tape and Reel
STMicroelectronics SCT
High voltage fast-switching NPN power transistor
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
STMicroelectronics NPN, SOT-223 (SC-73), , 1.5 A, -400 V
TRANSISTOR, NPN, 400V, 1A, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:1.6W; DC Collector Current:500mA; DC Current Gain hFE:25hFE; Transisto
Transistor, Bipolar, Npn, 400V, 500Ma, Sot-223-4; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:400V; Frecuencia De Transición Ft:-; Disipación De Potencia Pd:1.6W; Corriente De Colector Dc:1.5A; Núm. De Contactos:4 |Stmicroelectronics STN83003
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1.5 / Collector-Emitter Voltage (Vceo) V = 400 / DC Current Gain (hFE) = 32 / Collector-Base Voltage (Vcbo) V = 18 / Emitter-Base Voltage (Vebo) V = 18 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 1.6 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1