価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-8484-1-ND | 19 | 1 | Cut Tape | ||||||||
| Avnet | STL65N3LLH5 | 0 | 3K | 1d | ||||||||
| Win Source | WS-STL65N3LLH5 | 6,000 | 50 | 16h | ||||||||
| Worldway Electronics | STL65N3LLH5 | 22,506 | 7 | Tape & Reel | 15h | |||||||
| Esaler Electronic | STL65N3LLH5 | 1 | 4d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
関連部品
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 65A;D-Pak (TO-252AA);PD 75W
InfineonIRLR7821PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 65A;D-Pak (TO-252AA);PD 75W
説明
STMicroelectronics STL65N3LLH5の詳細は販売業者から提供されます。
N-channel 30 V, 0.0048 Ohm, 19 A PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET
Trans MOSFET N-CH 30V 65A 8-Pin Power Flat T/R
MOSFET N-Channel 30V 65A PowerFLAT8
65 A 30 V 0.0075 ohm N-CHANNEL Si POWER MOSFET
Mosfet, N Ch, 30V, 19A, Powerflat6x5
Power Field-Effect Transistor, 65A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 30V, 19A, POWERFLAT6X5; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerFLAT; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:19A; Package / Case:PowerFLAT; Power Dissipation Pd:60W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:22V; Voltage Vgs Rds on Measurement:10V
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)65 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)22 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
PackagingDigi-Reel®
Power Dissipation60 W
Rds On Max5.8 mΩ
Resistance5.8 mΩ
Rise Time14.5 ns
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time22.7 ns
Turn-On Delay Time9.3 ns
Dimensions
Height880 µm
Length4.75 mm
Width5.75 mm