サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-07
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
関連部品
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説明
STMicroelectronics STL34N65M5の詳細は販売業者から提供されます。
N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV
N-Channel 650 V 120 mOhm 22.5 A MDmesh V Power MosFet - PowerFLAT 8 x 8
Trans MOSFET N-CH 650V 22.5A 5-Pin Power Flat T/R
Low gate input resistance | MOSFET N-CH 650V 3.2A PWRFLAT88
Power Field-Effect Transistor, 22.5A I(D), 650V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 650V 3.2A PWRFLAT88
16/32-Bits Micros |Stmicroelectronics STL34N65M5
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
MountSurface Mount
Number of Pins8
Number of Terminals4
Technical
Continuous Drain Current (ID)22.5 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time7.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.7 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation2.8 W
Rds On Max120 mΩ
Rise Time8.7 ns
Schedule B8541290080