価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STI6N62K3 | 0 | 1 | 2h | ||||||||
| Mouser | 511-STI6N62K3 | 77 | 1 | Tube | ||||||||
| Microchip USA | STI6N62K3 | 2,839 | 3500 | Tray | 4d | |||||||
| Component Stockers USA | STI6N62K3 | 545 | >1wk | |||||||||
| Win Source | WS-STI6N62K3 | 20 | 23 | 3h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-22
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2021-01-10
LTD Date2021-07-10
関連部品
onsemiFQI5N50CTU
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemiFQI6N60CTU
Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
説明
STMicroelectronics STI6N62K3の詳細は販売業者から提供されます。
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAK
Power Mosfet, N Channel, 5.5 A, 620 V, 0.95 Ohm, 10 V, 3.75 V |Stmicroelectronics STI6N62K3
MOSFET N-CH 620V 5.5A I2PAK / N-Channel 620 V 5.5A (Tc) 90W (Tc) Through Hole I2PAK
620 V, 5.5 A, 0.95 OHM IN I2PAK N-CHANNEL SUPERMESH3 POWER MOSFET Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 620V, 5.5A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)620 V
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance875 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
Rds On Max1.2 Ω
Rise Time12 ns
Threshold Voltage3.75 V
Turn-Off Delay Time49 ns
Turn-On Delay Time22 ns
Dimensions
Height10.75 mm
Length10.4 mm
Width4.6 mm