サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-22
Lifecycle StatusObsolete (Last Updated: 1 month ago)
関連部品
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説明
STMicroelectronics STI30N65M5の詳細は販売業者から提供されます。
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET I2PAK
MOSFET N-CH 650V 22A I2PAK
Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 650V, 22A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power ;RoHS Compliant: Yes
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance139 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.88 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation140 W
Rds On Max139 mΩ
Rise Time8 ns
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time50 ns
Dimensions
Height10.75 mm
Length10.4 mm
Width4.6 mm