サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-10-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
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N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
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Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
説明
STMicroelectronics STH250N55F3-6の詳細は販売業者から提供されます。
N-channel 55 V, 2.2 mOhm, 180 A, H2PAK, STripFET III Power MOSFET
Trans MOSFET N-CH 55V 180A 7-Pin(6+Tab) H2PAK T/R
Power Field-Effect Transistor, 180A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.8 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation300 W
Rds On Max2.6 mΩ
Resistance2.6 MΩ
Rise Time150 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time25 ns