サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-02
LTD Date2021-04-02
関連部品
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N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
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説明
STMicroelectronics STH185N10F3-2の詳細は販売業者から提供されます。
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STH185N10F3-2 N-channel MOSFET Transistor, 180 A, 100 V
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
MOSFET N-CH 100V 180A H2PAK-2 / Switching applications
Automotive Power Discrete, 100V, 180A, H2PAK-2, Tape and Reel
STMicroelectronics SCT
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Technical
Continuous Drain Current (ID)180 A
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Input Capacitance6.665 nF
Max Operating Temperature175 °C
Max Power Dissipation315 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation315 W
Rds On Max4.5 mΩ
Turn-Off Delay Time99.9 ns
Turn-On Delay Time25.6 ns
Dimensions
Length15.8 mm