STMicroelectronics STGWA25M120DF3の詳細は販売業者から提供されます。
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Trans IGBT Chip N-CH 1200V 50A 375W 3-Pin(3+Tab) TO-247 Tube
STMICROELECTRONICS STGWA25M120DF3 IGBT Single Transistor, 50 A, 1.85 V, 375 W, 1.2 kV, TO-247, 3 Pins
Trench gate field-stop IGBT, TO-247 long leads, Tube
STMicroelectronics SCT
IGBT 1200V 50A 375W TO247 / Low thermal resistance
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
IGBT 1200V 25A 1,85V TO-247 LL
Igbt |Stmicroelectronics STGWA25M120DF3
TO-247 IGBT Transistors / Modules ROHS
375W 1.85V 2.3V@ 15V,25A 50A TO-247 15.8mm*5mm*21mm
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
IGBT TRENCH FS 1200V 50A TO247