サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-08-08
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2018-06-22
LTD Date2018-12-22
関連部品
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N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a I2PAKFP package
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説明
STMicroelectronics STFI8N80K5の詳細は販売業者から提供されます。
N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in I2PAKFP package
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) I2PAKFP Tube
MOSFET N-CH 800V 0.8Ohm typ 6A Zener-protected
25W(Tc) 30V 5V@ 100¦ÌA 16.5nC@ 10 V 1individualNChannel 800V 950m¦¸@ 3A,10V 6A 450pF@100V TO-281 Through hole mounting 10.85mm(height)
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance450 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max950 mΩ
Rise Time14 ns
Turn-Off Delay Time32 ns
Turn-On Delay Time12 ns
Dimensions
Height10.85 mm
Length10.4 mm
Width4.6 mm