関連部品
STMicroelectronicsSTE88N65M5
N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package
説明
STMicroelectronics STE70NM50の詳細は販売業者から提供されます。
N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET
500 V, 70 A, 0.045 OHM ISOTOP N CHANNEL ZENER, PROTECTED MDMESHPOWER MOSFET Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 500V, 70A, ISOTOP; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:600W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:70A; Package / Case:ISOTOP; Power Dissipation Pd:600W; Termination Type:Screw; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
メーカーの別名
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- SGS-Thomson Microelectronics
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技術仕様
Physical
MountChassis Mount, Screw
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)70 A
Current Rating70 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)500 V
Fall Time46 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.5 nF
Max Operating Temperature150 °C
Max Power Dissipation460 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation600 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time58 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-On Delay Time51 ns
Voltage Rating (DC)500 V
Dimensions
Height9.1 mm
Length38.2 mm
Width25.5 mm