サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
STMicroelectronicsSTD2NK60Z-1
N-channel 600 V, 7.2 Ohm, 1.4 A Zener-protected SuperMESH(TM) MOSFET in a IPAK package
説明
STMicroelectronics STD1NK80Z-1の詳細は販売業者から提供されます。
MOSFET N-CH 800V 1A IPAK / Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube
Lgs Lv Mosfet |Stmicroelectronics STD1NK80Z-1
Power Field-Effect Transistor, 1A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET N-CH 800V 1A IPAK
CAP CER 33PF 3KV C0G 1808
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance16 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance160 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max16 Ω
Rise Time30 ns
Schedule B8541290080
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns