サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-09
Lifecycle StatusObsolete (Last Updated: 1 month ago)
関連部品
STMicroelectronicsSTB5NK50ZT4
Mosfet Transistor, N Channel, 4.4 A, 500 V, 1.22 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
説明
STMicroelectronics STB5N62K3の詳細は販売業者から提供されます。
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in D2PAK package
N-Channel 620 V 1.6 Ohm Surface Mount SupeMesh III Power MosFet - D2PAK
Trans MOSFET N-CH 620V 4.2A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 620V, 4.2A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; P
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.2 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
PackagingDigi-Reel®
Power Dissipation70 W
Rds On Max1.6 Ω
Resistance1.6 Ω
Rise Time8 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time40 ns
Turn-On Delay Time12 ns