説明
STMicroelectronics STB2N62K3の詳細は販売業者から提供されます。
N-channel 620 V, 3 Ohm, 2.2 A, D2PAK SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 620V 2.2A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)620 V
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation45 W
Rds On Max3.6 Ω
Resistance3.6 Ω
Rise Time4.4 ns
Schedule B8541290080
Turn-Off Delay Time21 ns
Turn-On Delay Time8 ns