関連部品
STMicroelectronicsSTAC2942BW
STAC2942 Series 130 V 40 A 350 W 21 dB N-channel RF SMT Power Transistor
NXP SemiconductorsBLF573,112
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsMRFE6VP6300HR5
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
説明
STMicroelectronics STAC2933の詳細は販売業者から提供されます。
300W - 50V HF/VHF DMOS in STAC177 package
Transistor RF FET N-CH 130V 40A 30MHz 5-Pin STAC177B Tray
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
TO220FP 300W 30MHZ 50V RF DMOS
MOSF RF N CH 130V 40A STAC177B
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Body MaterialCeramic
MountScrew
Number of Pins5
Number of Terminals4
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage130 V
Drain to Source Voltage (Vdss)130 V
Frequency30 MHz
Gain23.5 dB
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature200 °C
Max Power Dissipation795 W
Min Breakdown Voltage130 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power400 W
PackagingBox
Test Current250 mA
Test Voltage50 V
Voltage Rating130 V