サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2005-12-27
説明
STMicroelectronics IRF820の詳細は販売業者から提供されます。
N-Channel 500V - 2.5 Ohm - 4A - TO-220 PowerMESH(TM) II MOSFET
Transistor IRF820 N-Channel MOSFET 500 Volt 4 Amp TO-220
MOSFET N-CH 500V 4A TO-220 / N-CHANNEL Enhancement-Mode Silicon Gate TMOS
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220
Power Field-Effect Transistor, 4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
80W(Tc) 30V 4V@ 250µA 17nC@ 10 V 1individualNChannel 500V 3Ω@ 1.5A,10V 315pF@25V TO-220 Through hole mounting 9.15mm(height)
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance315 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation75 W
Rds On Max3 Ω
Rise Time13 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)500 V
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant