サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2018-06-29
LTD Date2018-12-29
説明
STMicroelectronics ESM3030DVの詳細は販売業者から提供されます。
Power Bipolar Transistor, 100A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, 4 Pin
Trans Darlington NPN 300V 100A 225000mW 4-Pin ISOTOP Tube
NPN-TRANSISTOR 300V 100A ISOTOP RoHSconf
DARLINGTON TRANSISTOR, SOT-227; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:225W; DC Collector Current:100A; DC Current Gain hFE:300hFE; Transistor Ca
TRANSISTOR, DARLINGTON SOT-227; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transistor Case Style: SOT-227; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 100A; Continuous Collector Current Ic Max:
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageSOT-227-4
Contact PlatingNickel
MountChassis Mount, Panel, Screw
Number of Pins4
Number of Terminals4
Technical
Collector Emitter Breakdown Voltage300 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)300 V
Current Rating100 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Fall Time600 ns
hFE Min300
Max Collector Current100 A
Max Operating Temperature150 °C
Max Power Dissipation225 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation225 W
Voltage Rating (DC)300 V
Dimensions
Height9.1 mm
Length38.2 mm