関連部品
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1.9 mm Round 940 nm Subminiature Z-Bend Surface Mount Infrared Phototransistor
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Silicon NPN Phototransistor in MIDLED package, -40 to 100 °C, 1.6 x 3.1 x 2.3 mm
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Silicon NPN Phototransistor in MIDLED package, -40 to 100 °C, 2.3 x 3.1 x 1.6 mm
説明
Sharp PT100MF1MP1の詳細は販売業者から提供されます。
SENSOR PHOTO 910NM UNIVERSAL SMD / Phototransistors 910nm Universal 2-SMD, No Lead
910nm SMD SMD mount，glue mount 3mm*1.5mm*2.2mm
Photodarlington IR Chip 860nm 2-Pin SMD T/R
PHOTOTRANS DARL OUT CLEAR SMD
Photo Darlington, 860nm
PHOTO TRANSISTOR DETECTOR
メーカーの別名
Sharpは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Sharp は以下の名前でも知られているかもしれません：
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
技術仕様
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins2
ShapeRound
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)6 V
Dark Current1 µA
Fall Time2 ms
Lens StyleDomed
Max Breakdown Voltage35 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Max Power Dissipation75 mW
Min Operating Temperature-30 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Peak Wavelength860 nm
PolarityNPN
Power Dissipation75 mW
Rise Time2 ms
Viewing Angle30 °
Wavelength910 nm
Dimensions
Height2.2 mm
Length3 mm
Width1.5 mm