サプライチェーン
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-03-30
LTD Date2021-03-30
説明
Sharp GP1S52VJ000Fの詳細は販売業者から提供されます。
Photointerrupter Transmissive 3mm Phototransistor 4-Pin
PHOTO INTERRUPTER, TRANSMISSIVE, 3MM; Sensor Output: Phototransistor; Sensor Mounting: Through Hole; Gap Width: 3mm; Aperture Width: 0.5mm; Forward Current If: 50mA; Reverse Voltage Vr: 6V; Forward Voltage: 1.2V; Product Range:
PHOTOINTERRUPTER; No. of Channels:1; Output Type:Transistor; Input Current:50mA; Voltage, Output Max:35V; Case Style:Slotted Switch; Operating Temperature Range:-25°C to +85°C; Collector-to-Emitter Breakdown Voltage:35V; Current Ic ;RoHS Compliant: Yes
PHOTOINTERRUPTER; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:35V; Opto Case Style:Through Hole; No. of Pins:4; Collector Emitter Voltage V(br)ceo:35V; Continuous Collector Current Ic Max:5mA; Current Ic Typ:20mA; External Depth:5.0mm; External Length / Height:10mm; External Width:12.2mm; Fall Time tf:4µs; Forward Voltage VF Max:1.4V; Gap Width:3mm; Operating Temperature Range:-25°C to +85°C; Output Type:Phototransistor; Peak Forward Current:50mA; Power Dissipation Pd:150mW; Power Dissipation Pd:150mW; Reverse Leakage Current Max:10.0µA; Rise Time:3µs; Voltage Vf Typ:1.25V
メーカーの別名
Sharpは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Sharp は以下の名前でも知られているかもしれません：
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
技術仕様
Physical
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time20 µs
Forward Current50 mA
Forward Voltage1.2 V
Input Current20 mA
Max Collector Current20 mA
Max Operating Temperature85 °C
Max Output Current20 mA
Min Operating Temperature-25 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Current20 mA
Output Voltage35 V
Response Time4 µs
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Sensing Distance2.9972 mm
Dimensions
Height10 mm
Length12.2 mm