関連部品
InfineonFF150R17KE4HOSA1
IGBT Array & Module Transistor, Dual NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module
説明
Semikron SKM600GA176Dの詳細は販売業者から提供されます。
Trans IGBT Module N-CH 1700V 660A 4-Pin
IGBT MODULE, N CH, 1.7KV, 660A; Transistor Polarity: N Channel; DC Collector Current: 660A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.7kV; Transistor Case
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives mains 575 - 790 V AC Public transport (auxiliary systems)
Igbt, Module, 1.7Kv, 660A, Semitrans 4; Continuous Collector Current:660A; Collector Emitter Saturation Voltage:2V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Semikron SKM 600 GA 176 D
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