Semikron SKM100GB063D

Name: Semikron SKM100GB063D
Brand: Semikron
SKU: SKM100GB063D

Igbt, D-61, Igbt, 600 V, 130 A, 600 V, 130 A, 600 V, -40 to 150 Degc | Semikron SKM100GB063D

$ 121.16

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	SKM100GB063D	0	1	Bulk	137.68	121.16	121.16	121.16	121.16	14h
Newark	SKM 100 GB 063D	0	8
ATI ACCURATE TECHNOLOGY	SKM100GB063D-SEMIKRON	4			196.00	166.60	166.60	166.60	166.60	1h
Win Source	WS-SKM100GB063D	6	1		110.71	92.857	92.857	92.857	92.857	2h
IC Components Ltd.	SKM100GB063D	3,706			28.200	28.200	28.200	28.200	28.200	3d

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Farnell

Datasheet6ページ0年前

Newark

RS (Formerly Allied Electronics)

iiiC

説明

Semikron SKM100GB063Dの詳細は販売業者から提供されます。

Igbt, D-61, Igbt, 600 V, 130 A, 600 V, 130 A, 600 V, -40 to 150 Degc | Semikron SKM100GB063D

SHENGYU ELECTRONICS

IGBT MODULE, DUAL N CH, 600V, 130A; Transistor Polarity: Dual N Channel; DC Collector Current: 130A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 600V; Trans

Farnell

Igbt Module, 600V, 130A, Semitrans 2; Continuous Collector Current:130A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SKM 100 GB 063D

Newark

not recommended for new design Features: N channel, homogeneous Silicon structure (NPT- Non punch through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: Switching (not for linear use) Switched mode power supplies UPS Three phase inverters for servo / AC motor speed control Pulse frequencies also above 10 kHz

Semikron