IGBT MODULE, 1.2KV, 100A, SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C
not recommended for new design Features: MOS input (voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: AC inverter drives UPS