関連部品
Toshiba2SA1941-O(Q)
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, 3 Pin
説明
Sanken 2SB1560の詳細は販売業者から提供されます。
Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 150V 10A 100000mW 3-Pin(3+Tab) TO-3P
DARLINGTON TRANSISTOR, TO-3P; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:100W; DC Collector Current:10A; DC Current Gain hFE:5000; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Av Current Ic:10A; Collector Emitter Voltage Vces:2.5V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:7A; Device Marking:2SB1560; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50MHz; Hfe Min:5000; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Ptot Max:100W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:160V
DARLINGTON TRANSISTOR, TO-3P; Transistor Type:Bipolar Darlington; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:150V; Current Ic Continuous a Max:10A; Voltage, Vce Sat Max:2.5V; Power Dissipation:100W; Min Hfe:5000;;RoHS Compliant: Yes
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