サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-15
LTD Date2013-11-15
関連部品
InfineonBSP322P L6327
MOSFET, P-CH, 100V, 1A, SOT-223; Transistor Polarity:P Channel; Continuous Drain
InfineonBSP317PL6327
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説明
Rochester Electronics BSP321PL6327の詳細は販売業者から提供されます。
0.98 A 100 V 0.9 ohm P-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 0.98A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP321 SIPS SMALL-SIGNAL P-CHANNEL;
メーカーの別名
Rochester Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Rochester Electronics は以下の名前でも知られているかもしれません：
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
技術仕様
Physical
Case/PackageSOT-223-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)980 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance319 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
Power Dissipation1.8 W
Rds On Max900 mΩ
Rise Time4.4 ns
Turn-Off Delay Time16.5 ns
Turn-On Delay Time5.9 ns