Renesas ICL7667CPAZの詳細は販売業者から提供されます。
Tube ICL7667 High-Side or Low-Side 1999 gate driver 20ns 20ns 0C~70C TA 0.8V 2V 9.585mm
RoHS Compliant Active Matte Tin (Sn) - annealed e3 IC Gate Driver 10.16mm 15V 500mW 1A
Dual Power MOSFET Driver Buffer/Inverter Based MOSFET Driver, CMOS, PDIP8
ICL7667 Series Dual 15 Vin 1 A 8 Ohm Mosfet Driver - PDIP-8
Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70°
Dual Power MOSFET Driver; 4.5 To 15 Vcc, PDIP8, Pb-Free
MOSFET DRIVER, HIGH SPEED, DIP-8; No. of Channels:2Channels; Gate Driver Type:-; Driver Configuration:-; Power Switch Type:MOSFET; No. of Pins:8Pins; IC Case / Package:DIP; IC Mounting:Surface Mount; Input Type:Inverting; MSL:- RoHS Compliant: Yes
IC, DRIVER, MOS, DUAL, 7667, DIP8; Device Type:Power; Module Configuration:Inverting; Peak Output Current:1A; Output Resistance:8ohm; Input Delay:20ns; Supply Voltage Range:4.5V to 15V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:0°C to +70°C; SVHC:No SVHC (15-Dec-2010); Base Number:7667; IC Generic Number:7667; IC Temperature Range:Commercial; Logic Function Number:7667; No. of Channels:2; No. of Drivers:2; No. of Outputs:2; Operating Temperature Max:70°C; Operating Temperature Min:0°C; Output Voltage:15V; Output Voltage Max:15V; Package / Case:DIP; Power Dissipation Pd:500mW; Supply Voltage Max:15V; Supply Voltage Min:4.5V; Termination Type:Through Hole
The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current outputs at voltages up to 15V. Its High-Speed and current output enable it to drive large capacitive loads with high slew rates and low propagation delays. With an output voltage swing only millivolts less than the supply voltage and a maximum supply voltage of 15V, the ICL7667 is well suited for driving power MOSFETs in high frequency switched-mode power converters. The ICL7667's high current outputs minimize power losses in the power MOSFETs by rapidly charging and discharging the gate capacitance. The ICL7667's inputs are TTL compatible and can be directly driven by common pulse-width modulation control ICs.