サプライチェーン
Harmonized Tariff Schedule (HTS) Code8541.40.70.80
Introduction Date1993-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-03-31
LTD Date2021-12-31
説明
ams-OSRAM BPX 82の詳細は販売業者から提供されます。
Silicon NPN Phototransistor Arrays, -40 to 80 °C, 1.8 x 4.7 x 3.4 mm
Osram Opto SCT
Phototransistor Array Silicon 850nm 6-Pin
PHOTOTRANSISTOR,2 ELEMENTS,18DEG, BPX82
PHOTO TRANSISTOR, NPN, 850NM, DIP-6
SENSOR PHOTO 850NM TOP VIEW 6DIP
- Pre-ordered transistors ROHS
Photo Transistor, Npn, 850Nm, Dip-6; Wavelength Typ:850Nm; Viewing Angle:36°; Power Consumption:90Mw; No. Of Pins:6Pins; Transistor Case Style:Dip; Product Range:-; Automotive Qualification Standard:-; Svhc:No Svhc (27-J Rohs Compliant: Yes |Ams Osram Group BPX 82
メーカーの別名
ams-OSRAMは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 ams-OSRAM は以下の名前でも知られているかもしれません：
- AMS OSRAM GROUP
- AMS-OSRAM INTERNATIONAL GMBH
技術仕様
Physical
Case/PackageDIP
Contact PlatingTin
Lens ColorClear
MountThrough Hole
Number of Pins6
ShapeRound
Technical
Collector Emitter Breakdown Voltage32 V
Collector Emitter Voltage (VCEO)35 V
Dark Current50 nA
Fall Time6 µs
Lens StyleDomed
Max Breakdown Voltage35 V
Max Collector Current50 mA
Max Operating Temperature80 °C
Max Power Dissipation90 mW
Min Operating Temperature-40 °C
Number of Circuits2
Number of Elements3
OrientationTop View
PackagingBulk
Peak Wavelength850 nm
PolarityNPN
Power Consumption90 mW
Power Dissipation90 mW
Rise Time6 µs
Viewing Angle36 °
Wavelength850 nm
Dimensions
Height3.4 mm
Length1.8 mm
Width4.7 mm