サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
関連部品
InfineonIPB26CN10NGATMA1
MOSFET N-CH 100V 35A TO263-3 / Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK T/R
説明
onsemi SFW9530TMの詳細は販売業者から提供されます。
MOSFET P-CH 100V 10.5A D2PAK
Tape & Reel (TR) Surface Mount P-Channel MOSFET (Metal Oxide) Mosfet Transistor 10.5A Tc 3.8W Ta 66W Tc 100V -55C~175C TJ
Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs PCh/100V/1.5a/ .3Ohm
P-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)10.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.035 nF
Max Operating Temperature175 °C
Max Power Dissipation66 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max300 mΩ
Rise Time22 ns
Turn-Off Delay Time45 ns