サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1979-06-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
説明
onsemi PN3563の詳細は販売業者から提供されます。
RF SMALL SIGNAL TRANSISTOR / RF Transistor NPN 15V 50mA 1.5GHz 350mW Through Hole TO-92-3
Trans GP BJT NPN 15V 0.05A 3-Pin TO-92 Bulk
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
Transistor; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):20; Package/Case:3-TO-92; C-E Breakdown Voltage:15V; DC Collector Current:0.05A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, N CH 30MA TO-92; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:15V; Power Dissipation Pd:350mW; DC Collector Current:50mA; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Continuous Collector Current Ic:8mA; Gain Bandwidth ft Typ:1.5GHz; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage15 V
Collector Emitter Voltage (VCEO)15 V
Continuous Collector Current50 mA
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2 V
Frequency1.5 GHz
Gain26 dB
Gain Bandwidth Product1.5 GHz
hFE Min20
Max Collector Current50 mA
Max Frequency1.5 GHz
Max Operating Temperature150 °C
Max Power Dissipation600 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation350 mW
TerminationThrough Hole
Transition Frequency600 MHz
Voltage Rating (DC)15 V