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Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 1200V V(RRM), Silicon Carbide
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, Die
DIODE SIL CARBIDE 1.2KV 20A DIE
Compliant 20 A 1.23 kV Production (Last Updated: 2 years ago) 200 µA 175 °C ACTIVE (Last Updated: 2 years ago) 175 °C
0μs 200uA@1.23kV 20A TO-247 SMD mount
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions