onsemi NTH4L040N120SC1の詳細は販売業者から提供されます。
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 58 A, 1.2 kV, 0.04 ohm, TO-247
SICFET N-CH 1200V 58A TO247-4 / N-Channel 1200 V 58A (Tc) 319W (Tc) Through Hole TO-247-4L
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
Power Field-Effect Transistor, 58A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
1.2kV 58A 40m´Î@20V35A 319W 3V@10mA 11pF@800V N Channel 1.762nF@800V 106nC@-5~20V -55¡Í~+175¡Í@(Tj) TO-247-4 MOSFETs ROHS
Sic Mosfet, N-Ch, 20V, 58A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:20V; Power Dissipation:319W Rohs Compliant: Yes |Onsemi NTH4L040N120SC1