onsemi NGTG12N60TF1Gの詳細は販売業者から提供されます。
Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-3PF Tube
IGBT, N-Channel, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L N-Channel IGBT, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L
ON SEMICONDUCTOR NGTG12N60TF1GIGBT Single Transistor, 24 A, 1.4 V, 54 W, 600 V, TO-3PF, 3 Pins
IGBT, SINGLE, N CH, 600V, 24A, TO-3PF-3
54W 1.4V 600V 24A TO-3PF 15.5mm*5.5mm*26.5mm
Insulated Gate Bipolar Transistor
IGBT, SINGLE, N CH, 600V, 24A, TO-3PF-3; DC Collector Current: 24A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 54W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-3PF; No. o